Samsung Develops CXL-Based DRAM Memory Tech For Data Centres

Samsung Electronics said on Tuesday it has developed a new DRAM memory technology based on the Compute Express Link (CXL) interconnect standard that can upgrade the performances of data centers.

Samsung unveiled the industry's first Double Data Rate 5 (DDR5) DRAM memory module that supports the advanced CXL interface.

CXL is an open industry-standard interconnect based on the PCI Express (PCIe) 5.0 interface that enables high-speed, low latency communication between the host processor and devices, such as accelerators, memory buffers, and smart input/output devices.

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Unlike conventional DDR-based memory, which has limited memory channels, Samsung said its CXL-based DRAM module can expand its memory capacity to the terabyte level while reducing system latency.

Such a memory module will be ideal to meet the demands of data-intensive applications, including artificial intelligence and high-performance computing (HPC) workloads in data centers, it added.

Samsung said it applied an enterprise and data center solid-state drive form factor (EDSFF), which is used for large capacity solid-state drives, to expand the memory capacity of its CXL-based DRAM, reports Yonhap news agency.

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The world's largest memory chip producer also incorporated several controller and software solutions like memory mapping, interface converting, and error management, so that the computing system can recognize the CXL-based memory and utilize it as the main memory.

Samsung has been collaborating with the data center, server, and chipset manufacturers to develop next-generation interface technology since the CXL consortium was formed in 2019.

The South Korean tech giant said its new DRAM module has been successfully verified on next-generation server platforms from Intel Corp., and it plans to commercialize the product in the future. (IANS/KB)